收藏本站
Polar TM HiPerFET TM
Power MOSFETs
IXFA7N100P
IXFP7N100P
IXFH7N100P
V DSS
I D25
R DS(on)
= 1000V
= 7A
≤ 1.9 Ω
N-Channel Enhancement Mode
Avalanche Rated
TO-263 AA (IXFA)
Fast Intrinsic Rectifier
G
S
D (Tab)
Symbol
V DSS
V DGR
Test Conditions
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Maximum Ratings
1000
1000
V
V
TO-220AB (IXFP)
V GSS
V GSM
Continuous
Transient
± 30
± 40
V
V
G
DS
D (Tab)
I D25
I DM
I A
E AS
T C = 25 ° C
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
T C = 25 ° C
7
18
7
300
A
A
A
mJ
TO-247 (IXFH)
dv/dt
P D
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
10
300
V/ns
W
G
D
S
D (Tab)
T J
T JM
T stg
-55 ... +150
150
-55 ... +150
° C
° C
° C
G = Gate
S = Source
D = Drain
Tab = Drain
T L
T SOLD
M d
Weight
1.6mm (0.062) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220 & TO-247)
TO-263
TO-220
TO-247
300
260
1.13 / 10
2.5
3.0
6.0
° C
° C
Nm/lb.in.
g
g
g
Features
International Standard Packages
Fast Intrinsic Rectifier
Avalanche Rated
Low R DS(ON) and Q G
Low Package Inductance
Advantages
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
High Power Density
Easy to Mount
BV DSS
V GS = 0V, I D = 250 μ A
1000
V
Space Savings
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 1mA
V GS = ± 30V, V DS = 0V
V DS = V DSS , V GS = 0V
T J = 125 ° C
3.0
6.0 V
± 100 nA
15 μ A
1.0 mA
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Note 1
1.9
Ω
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
? 2011 IXYS CORPORATION, All Rights Reserved
DS99924B(11/11)
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IXFB100N50P MOSFET N-CH 500V 100A PLUS264
IXFB100N50Q3 MOSFET N-CH 500V 100A PLUS264
IXFB120N50P2 MOSFET N-CH 500V 120A PLUS264
IXFB170N30P MOSFET N-CH TO-264
IXFB210N20P MOSFET N-CH 200V 210A PLUS264
IXFB30N120P MOSFET N-CH 1200V 30A PLUS264
IXFB38N100Q2 MOSFET N-CH 1000V 38A PLUS264
IXFB40N110P MOSFET N-CH 1100V 40A PLUS264
相关代理商/技术参数
IXFA7N60P3 制造商:IXYS Corporation 功能描述:MOSFET N-CH 600V 7A TO-263AA 制造商:IXYS Corporation 功能描述:MOSFET 600V 7A
IXFA7N80P 功能描述:MOSFET 7 Amps 800V 1.44 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFA8N50P3 功能描述:MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFB 80N50Q2 制造商:IXYS Corporation 功能描述:Trans MOSFET N-CH 500V 80A 3-Pin PLUS 264 制造商:Ixys Corporation 功能描述:Trans MOSFET N-CH 500V 80A 3-Pin PLUS 264
IXFB100N50P 功能描述:MOSFET 100 Amps 500V 0.05 Ohms Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFB100N50Q3 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 500V/100A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFB110N60P3 功能描述:MOSFET 600V 110A 0.056Ohm PolarP3 Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFB120N50P2 功能描述:MOSFET PolarP2 Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube